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| TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.8 to 3.0 ID (A) 0.12 Features D D D D D Low On-Resistance: 9.5 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Benefits D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away" Applications D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-236 (SOT-23) G 1 3 D S 2 Top View TN2010T (R1)* *Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203. TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 200 "20 0.12 0.08 0.34 0.35 0.22 357 -55 to 150 Unit V A W _C/W _C Siliconix S-52426--Rev. C, 14-Apr-97 1 TN2010T Specificationsa Limits Parameter Static Drain-SourceBreakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentc Drain-Source On Resistance Drain Source On-Resistancec Forward Transconductance c Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = 100 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V TJ = -55_C VDS = 10 V, VGS = 10 V VGS = 10 V, ID = 0.1 A VGS = 4.5 V, ID = 0.05 mA VDS = 10 V, ID = 0.1 A IS = 0.085 A, VGS = 0 V 0.3 9.5 10 300 0.8 11 15 200 0.8 220 1.6 V 3.0 "100 1 10 nA mA mA W mS V Symbol Test Conditions Min Typb Max Unit Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 100 V, VGS = 10 V, ID ] 0.1 A 1750 275 300 35 6 2 pF pC Switchingd Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = 60 V, RL = 600 W ID ^ 0 1 A VGEN = 10 V 0.1 A, RG = 6 W 4 16 ns 16 45 2 Siliconix S-52426--Rev. C, 14-Apr-97 TN2010T Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 0.5 4V VGS = 10 V 0.4 I D - Drain Current (A) 3.4 V 3.2 V 0.3 3.0 V 0.2 2.8 V 2.6 V 0.1 2.4 V 2.2 V 2.0 V 0 2 4 6 8 10 I D - Drain Current (A) TC = -55_C 0.4 25_C 0.3 125_C 0.2 0.5 Transfer Characteristics 0.1 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 16 100 Capacitance rDS(on) - On-Resistance ( W) 80 VGS = 4.5 V VGS = 10 V 8 C - Capacitance (pF) 12 60 Ciss 40 4 20 Coss Crss 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 ID - Drain Current (A) 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 20 VGS - Gate-to-Source Voltage (V) Gate Charge 2.5 On-Resistance vs. Junction Temperature rDS(on) - On-Resistance (W) (Normalized) 16 VDS = 100 V ID = 100 mA 2.0 VGS = 10 V ID = 100 mA 1.5 VGS = 4.5 V ID = 50 mA 1.0 12 8 4 0 0 500 1000 1500 2000 2500 3000 3500 4000 Qg - Total Gate Charge (pC) 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Siliconix S-52426--Rev. C, 14-Apr-97 3 TN2010T Typical Characteristics (25_C Unless Otherwise Noted) 10.000 Source-Drain Diode Forward Voltage 12.0 11.5 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1.000 TJ = 150_C 0.100 rDS(on) - On-Resistance ( W ) 11.0 10.5 rDS @ ID = 100 m A 10.0 rDS @ ID = 50 m A 9.5 9 0.010 TJ = 25_C 0.001 0.30 0.45 0.60 0.75 0.90 1.05 1.20 3 5 7 9 11 13 15 17 19 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0.3 0.2 0.1 VGS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -75 -50 -25 Threshold Voltage ID = 250 mA 0 25 50 75 100 125 150 TJ - Temperature (_C) 4 Siliconix S-52426--Rev. C, 14-Apr-97 |
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